100 V N-channel MOSFET for automotive power switching
The STL45N10F7AG: The 100 V Vdss rating provides headroom for automotive bus applications.
Maximum on-resistance is 24 mOhm at 9 A drain current with 10 V gate-to-source drive. The specified drive voltage for achieving the rated Rds(on) is 10 V — the part is not optimised for 5 V logic-level gate drive.
Switching speed and gate drive requirements
Total gate charge at 10 V is 19.5 nC. Input capacitance Ciss is 1450 pF at 50 V drain-source. That capacitance, combined with the gate charge, determines the switching loss profile in hard-switched topologies like boost converters or motor-drive H-bridges.
AEC-Q101 qualification and junction temperature range
It is suitable for under-hood and chassis-domain electronics, not just cabin-level infotainment. The 175 °C ceiling is critical for engine-bay or exhaust-adjacent mounting.
Package and thermal management
The 8-lead PowerVDFN (PowerFlat 5x6) surface-mount package dissipates 72 W (Tc). The package is compatible with standard reflow soldering profiles; the lead-free finish is ROHS3 compliant.
Lifecycle and sourcing reality
The laser etch and date-code traceability should be verified against ST's factory marking guide when receiving material.