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STMicroelectronics STL45N10F7AG

STL45N10F7AG N-Channel MOSFET, 100 V, 18 A, AEC-Q101

MPNSTL45N10F7AG
End of Life

STMicroelectronics STripFET™ F7 Automotive N-Channel MOSFET, 100 V Vdss, 18 A continuous drain, 24 mOhm Rds(on) at 10 V, 19.5 nC gate charge, AEC-Q101 qualified, PowerFlat 5x6 surface-mount package, -55 to 175 °C junction temperature.

$1.59Ref. price · indicative, final on quote
STMicroelectronics STL45N10F7AG datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesSTripFET™ F7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STL45N10F7AG specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation72W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs19.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1450 pF @ 50 V

Product details

100 V N-channel MOSFET for automotive power switching

The STL45N10F7AG: The 100 V Vdss rating provides headroom for automotive bus applications.

Switching speed and gate drive requirements

Input capacitance Ciss is 1450 pF at 50 V drain-source. That capacitance, combined with the gate charge, determines the switching loss profile in hard-switched topologies like boost converters or motor-drive H-bridges.

AEC-Q101 qualification and junction temperature range

The 175 °C ceiling is critical for engine-bay or exhaust-adjacent mounting.

The 8-lead PowerVDFN (PowerFlat 5x6) surface-mount package dissipates 72 W (Tc).

The laser etch and date-code traceability should be verified against ST's factory marking guide when receiving material.

Frequently asked questions

Is STL45N10F7AG automotive qualified?

Yes, it is AEC-Q101 qualified, which is the stress-qualification standard for discrete semiconductors in automotive-grade electronics. This covers under-hood and chassis-domain applications.