STL42P4LLF6

STMicroelectronics · STripFET™ F6 Series

STMicroelectronics STripFET™ F6 series, STL42P4LLF6, P-Channel MOSFET, 40V Vdss, 42A Id, 18mOhm Rds(on) @ 5A, 10V, 22nC Qg, 2850pF Ciss, 175°C Tj, Surface Mount PowerFlat™ 5x6.

STMicroelectronics STL42P4LLF6
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[IN STOCK] In Stock: 560 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL42P4LLF6 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation75W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2850 pF @ 25 V

Technical details

P-channel 40 V switch in a PowerFlat 5x6

The STL42P4LLF6 is a P-Channel MOSFET from the STripFET™ F6 series, rated for 40 V drain-source and 42 A continuous drain current at 25°C case temperature. It comes in a surface-mount PowerFlat™ 5x6 package (8-PowerVDFN), which keeps the footprint compact for dense power-stage layouts. The 18 mOhm maximum on-resistance at 5 A and 10 V gate drive gives a low conduction loss figure for a P-channel device at this voltage class.

Gate charge is 22 nC maximum at 4.5 V, and input capacitance is 2850 pF at 25 V drain-source.

Temperature rating and environment

Junction temperature is rated to 175°C, which suits applications where ambient heat is high — think engine-bay electronics, industrial motor drives, or sealed power supplies. Maximum power dissipation is 75 W at the case, so a thermal path to a heatsink or PCB copper plane is expected for sustained loads near the 42 A rating.

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