STL3N65M2

STMicroelectronics · MDmesh™ M2 Series

STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V drain-source voltage, 2.3 A continuous drain current, 1.8 Ohm Rds(on) at 1 A, 10 V drive, PowerFlat™ 3.3x3.3 surface-mount package, -55°C to 150°C junction temperature.

STMicroelectronics STL3N65M2
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[IN STOCK] In Stock: 9 pcs
$3.79/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL3N65M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.3A (Tc)
Power dissipation22W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.8Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds155 pF @ 100 V

Technical details

650 V switch in a 3.3x3.3 mm footprint

The STL3N65M2: It comes in the PowerFlat™ 3.3x3.3 package — a low-profile, surface-mount package suited for space-constrained offline supplies and auxiliary converters where board height is a constraint.

On-resistance and drive requirements

Input capacitance Ciss is 155 pF at 100 V drain bias — a light load for the gate driver.

Thermal and operating envelope

Maximum power dissipation is 22 W at case temperature — achievable with adequate PCB copper on the PowerFlat drain pad. The 4 V maximum gate threshold at 250 µA ensures the device is fully off below 4 V, typical for logic-level drive.

STL3N65M2
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