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STMicroelectronics STL3N65M2

STL3N65M2 N-Channel MOSFET 650V 2.3A PowerFlat, Active

MPNSTL3N65M2
End of Life

STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V drain-source voltage, 2.3 A continuous drain current, 1.8 Ohm Rds(on) at 1 A, 10 V drive, PowerFlat™ 3.3x3.3 surface-mount package, -55°C to 150°C junction temperature.

$1.01Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STL3N65M2 Technical Specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.3A (Tc)
Power dissipation22W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.8Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds155 pF @ 100 V

Product details

650 V switch in a 3.3x3.3 mm footprint

The STL3N65M2: It comes in the PowerFlat™ 3.3x3.3 package — a low-profile, surface-mount package suited for space-constrained offline supplies and auxiliary converters where board height is a constraint.

On-resistance and drive requirements

Maximum on-resistance is 1.8 Ohm at 1 A drain current with 10 V gate drive. The gate charge is only 5 nC at 10 V, which keeps switching losses low in hard-switched topologies up to a few hundred kHz. Input capacitance Ciss is 155 pF at 100 V drain bias — a light load for the gate driver.

Thermal and operating envelope

Maximum power dissipation is 22 W at case temperature — achievable with adequate PCB copper on the PowerFlat drain pad. The 4 V maximum gate threshold at 250 µA ensures the device is fully off below 4 V, typical for logic-level drive.

Frequently asked questions

What is the typical application for STL3N65M2?

This 650 V MDmesh M2 MOSFET is suited for offline flyback converters, auxiliary power supplies, PFC stages, and LED drivers where the drain current stays below 2.3 A and the package height must be under 1 mm.