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STMicroelectronics STL3N10F7

STL3N10F7 N-Channel MOSFET, 100V 4A

MPNSTL3N10F7
End of Life

STMicroelectronics DeepGATE™, STripFET™ VII STL3N10F7, N-Channel MOSFET, 100V Vdss, 4A Id, 70mOhm Rds(on) at 10V Vgs, PowerFlat™ (2x2) package, -55°C to 150°C junction temperature.

$0.88Ref. price · indicative, final on quote
Packaging6-PowerWDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STL3N10F7 Technical Specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation2.4W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerWDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs7.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds408 pF @ 25 V

Product details

100 V N-channel in a 2x2 mm PowerFlat — what it fits

The PowerFlat™ (2x2) package keeps the footprint small — about the size of a grain of rice — which matters when board space is tight.

Gate charge and switching speed — the drive side

Total gate charge is 7.8 nC at 10 V gate drive, with input capacitance of 408 pF at 25 V drain bias. That low Qg means a modest gate driver can switch it fast — a 1 A driver charges the gate in under 10 ns, so the switching losses stay low even at a few hundred kHz. The ±20 V maximum gate-to-source rating gives headroom for gate-drive transients on a 12 V or 15 V rail.

The 2.4 W power dissipation at case temperature is the thermal budget — the PowerFlat's exposed pad needs a good copper area on the PCB to keep the junction below 150°C at full drain current.

Frequently asked questions

What is the Rds(on) of STL3N10F7?

The maximum on-resistance is 70 mOhm at 2 A drain current with 10 V gate drive. That is the figure to use for worst-case conduction loss calculations at the rated 4 A continuous drain current.