STMicroelectronics DeepGATE™, STripFET™ VII STL3N10F7, N-Channel MOSFET, 100V Vdss, 4A Id, 70mOhm Rds(on) at 10V Vgs, PowerFlat™ (2x2) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | DeepGATE™, STripFET™ VII |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 2.4W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-PowerWDFN |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 70mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 7.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 408 pF @ 25 V |
Total gate charge is 7.8 nC at 10 V gate drive, with input capacitance of 408 pF at 25 V drain bias. That low Qg means a modest gate driver can switch it fast — a 1 A driver charges the gate in under 10 ns, so the switching losses stay low even at a few hundred kHz.
The maximum on-resistance is 70 mOhm at 2 A drain current with 10 V gate drive. That is the figure to use for worst-case conduction loss calculations at the rated 4 A continuous drain current.