STL33N60M2 specifications
Parameter / Attribute	Specification / Value
Series	MDmesh™ II Plus
FET type	N-Channel
Mounting	Surface Mount
Drain to source voltage	600 V
Drive voltage (Max rds on, min rds on)	10V
Current - continuous drain (Id) @ 25°C	22A (Tc)
Power dissipation	190W (Tc)
Operating temperature	150°C (TJ)
Package	Tape & Reel (TR); Cut Tape (CT)
Vgs	±25V
Technology	MOSFET (Metal Oxide)
Case	8-PowerVDFN
Vgs(th) (Max) @ id	4V @ 250µA
Rds on (Max) @ id, vgs	135mOhm @ 10.75A, 10V
Gate charge (Qg) (Max) @ vgs	47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	1700 pF @ 100 V

Technical details

600 V, 22 A N-channel in a PowerFlat HV footprint

The STL33N60M2 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ II Plus series, built for high-voltage switching in a compact surface-mount PowerFlat™ (8x8) HV package. Gate drive is optimised for a 10 V rail: the 135 mOhm maximum Rds(on) is specified at 10 Vgs and 10.75 A, and the 47 nC total gate charge keeps switching losses manageable for hard-switched topologies.

No end-of-life notice is on record, and the MDmesh II Plus family continues to be a mainstream offering for ST. For dual-sourcing, the closest functional peer within the same series would be a similarly rated MDmesh II Plus part in the same package — no pin-compatible second source is published by ST, but the standard PowerFlat HV footprint is shared across several ST part numbers in this voltage/current range.

STL33N60M2

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