STL2N80K5

STMicroelectronics · SuperMESH5™ Series

STMicroelectronics SuperMESH5™ STL2N80K5, N-channel MOSFET, 800 Vdss, 2 A continuous drain, 4.9 Ohm Rds(on) at 1 A, 3 nC gate charge, 8-PowerVDFN PowerFlat 5x6, -55°C to 150°C junction.

STMicroelectronics STL2N80K5
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL2N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs4.9Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds95 pF @ 100 V

Technical details

800 V N-channel in a 5x6 PowerFlat — auxiliary supply switch

It is housed in an 8-PowerVDFN package — the PowerFlat 5x6 mm footprint with an exposed pad that sinks heat to the PCB copper plane. This part is designed for high-voltage DC-DC converters, flyback auxiliary supplies, and PFC stages where the primary switch sees 800 V peak on the drain node.

4.9 Ohm Rds(on) and 3 nC gate charge — conduction loss and drive budget

On-resistance is specified at 4.9 Ohm maximum with 10 V gate drive at 1 A drain current. At 2 A full load the conduction loss is under 20 W, which the 33 W package dissipation can handle with adequate copper area on the drain pad. Gate charge totals 3 nC at 10 V — low enough that a PWM controller's output pin can drive the gate directly without a separate driver IC, saving a component and board space in compact bias supplies.

The 150°C maximum junction allows headroom for derating in a 105°C ambient environment. Input capacitance is 95 pF at 100 V drain bias, keeping switching losses low at frequencies up to several hundred kilohertz.

STL2N80K5
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