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STMicroelectronics STL2N80K5

STL2N80K5 MOSFET N-CH 800V 2A PowerFlat, SuperMESH5

MPNSTL2N80K5
End of Life

STMicroelectronics SuperMESH5™ STL2N80K5, N-channel MOSFET, 800 Vdss, 2 A continuous drain, 4.9 Ohm Rds(on) at 1 A, 3 nC gate charge, 8-PowerVDFN PowerFlat 5x6, -55°C to 150°C junction.

$1.64Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STL2N80K5 Technical Specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs4.9Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds95 pF @ 100 V

Product details

800 V N-channel in a 5x6 PowerFlat — auxiliary supply switch

It is housed in an 8-PowerVDFN package — the PowerFlat 5x6 mm footprint with an exposed pad that sinks heat to the PCB copper plane. This part is designed for high-voltage DC-DC converters, flyback auxiliary supplies, and PFC stages where the primary switch sees 800 V peak on the drain node.

4.9 Ohm Rds(on) and 3 nC gate charge — conduction loss and drive budget

On-resistance is specified at 4.9 Ohm maximum with 10 V gate drive at 1 A drain current. At 2 A full load the conduction loss is under 20 W, which the 33 W package dissipation can handle with adequate copper area on the drain pad. Gate charge totals 3 nC at 10 V — low enough that a PWM controller's output pin can drive the gate directly without a separate driver IC, saving a component and board space in compact bias supplies.

The 150°C maximum junction allows headroom for derating in a 105°C ambient environment. Input capacitance is 95 pF at 100 V drain bias, keeping switching losses low at frequencies up to several hundred kilohertz.

Frequently asked questions

What is the Rds(on) of the STL2N80K5?

Maximum on-resistance is 4.9 Ohm at 1 A drain current with 10 V gate drive. This is the value used for conduction-loss calculations at the rated operating point.

What package does the STL2N80K5 come in?

The STL2N80K5 is supplied in an 8-PowerVDFN package — the PowerFlat 5x6 mm surface-mount footprint with an exposed thermal pad.

Is the STL2N80K5 RoHS compliant?

Yes, the STL2N80K5 is ROHS3 compliant per the manufacturer's listing.