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STMicroelectronics STL24N60M2
STMicroelectronics

STL24N60M2 N-Channel MOSFET, 600 V, 18 A, PowerFlat HV

MPNSTL24N60M2
End of Life

STMicroelectronics STL24N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 18 A continuous drain, 210 mOhm Rds(on) at 10 V, 29 nC gate charge, PowerFlat (8x8) HV surface-mount package.

$3.24Ref. price · indicative, final on quote
STL24N60M2 datasheet
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STL24N60M2 Technical Specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs210mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 100 V

Product details

Gate charge and switching loss — 29 nC at 10 V

Total gate charge is 29 nC at 10 V, which keeps the gate-drive energy per cycle low enough that a standard 1 A driver can switch the FET at 100 kHz without excessive dissipation in the driver IC. The input capacitance is 1060 pF at 100 V drain-source, a figure that directly sets the turn-on delay and the driver's peak current requirement.

PowerFlat (8x8) HV — thermal and footprint considerations

The 8-PowerVDFN package, branded PowerFlat (8x8) HV, exposes a large bottom-side pad for heat sinking. With a maximum power dissipation of 125 W at case temperature, the PCB copper area under the pad and the via array to the inner-layer planes determine the junction-to-ambient thermal resistance.

Frequently asked questions

What is the Rds(on) of STL24N60M2 at 10 V gate drive?

The maximum on-resistance is 210 mOhm at 10 V gate-source voltage and 9 A drain current. This is the figure to use for conduction loss calculations at the rated operating point.