STMicroelectronics STL24N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 18 A continuous drain, 210 mOhm Rds(on) at 10 V, 29 nC gate charge, PowerFlat (8x8) HV surface-mount package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 210mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1060 pF @ 100 V |
The input capacitance is 1060 pF at 100 V drain-source, a figure that directly sets the turn-on delay and the driver's peak current requirement.
The 8-PowerVDFN package, branded PowerFlat (8x8) HV, exposes a large bottom-side pad for heat sinking.
The maximum on-resistance is 210 mOhm at 10 V gate-source voltage and 9 A drain current. This is the figure to use for conduction loss calculations at the rated operating point.