Conduction and switching — the numbers that matter
Maximum on-resistance is 1.4 mOhm at 20 A drain current with 10 V gate drive — this is the conduction loss floor for a 60 V FET in this package class. Total gate charge at 10 V is 100 nC, and input capacitance at 25 V drain bias is 6600 pF — the gate driver must source enough peak current to hit the target switching frequency without excessive cross-conduction. Power dissipation is rated at 4.8 W with the device at 25°C ambient on a standard PCB, rising to 187 W when the case is held at 25°C — the real-world limit depends on the board's copper area and airflow.