STMicroelectronics · STripFET™ F7 Series
STMicroelectronics STripFET F7 series, STL220N6F7, N-channel MOSFET, 60 V Vdss, 120 A Id, 1.4 mOhm Rds(on) max at 20 A, 10 V, 100 nC Qg, PowerFlat 5x6 surface-mount package, -55°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ F7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 4.8W (Ta), 187W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6600 pF @ 25 V |
Maximum on-resistance is 1.4 mOhm at 20 A drain current with 10 V gate drive — this is the conduction loss floor for a 60 V FET in this package class. Power dissipation is rated at 4.8 W with the device at 25°C ambient on a standard PCB, rising to 187 W when the case is held at 25°C — the real-world limit depends on the board's copper area and airflow.
