STL15DN4F5

STMicroelectronics · Automotive, AEC-Q101, STripFET™ V Series

STMicroelectronics STL15DN4F5, Automotive AEC-Q101 STripFET™ V, Dual N-Channel MOSFET, 40V Vdss, 60A Id, 9mOhm Rds(on) @ 7.5A/10V, Logic Level Gate, PowerFlat 5x6, -55°C to 175°C.

STMicroelectronics STL15DN4F5
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL15DN4F5 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, STripFET™ V
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C60A
Power - max60W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 10V
Input capacitance (Ciss) (Max) @ vds1550pF @ 25V

Technical details

9 mOhm on-resistance — conduction loss and thermal budget

With a maximum Rds(on) of 9 mOhm at 7.5 A and 10 V gate drive, the STL15DN4F5 keeps I²R losses low in high-current paths.

Package and mounting — PowerFlat 5x6

Housed in an 8-lead PowerVDFN with a PowerFlat 5x6 mm footprint, the part is surface-mount only.

The junction temperature range spans -55°C to 175°C, covering automotive under-hood and industrial high-ambient environments. The 175°C maximum allows headroom for transient overloads, but continuous operation near that limit requires careful thermal management — the 60 A rating at 25°C must be derated per the datasheet's thermal impedance curves as ambient rises.

STL15DN4F5
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