STMicroelectronics · DeepGATE™, STripFET™ VII Series
STMicroelectronics DeepGATE™, STripFET™ VII, STL110N10F7, N-Channel MOSFET, 100V Vdss, 107A Id, 6mOhm Rds(on) at 10V, PowerFlat 5x6, -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | DeepGATE™, STripFET™ VII |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 107A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5117 pF @ 50 V |
The STL110N10F7: Rds(on) is 6 mOhm max at 10 V gate drive. Gate charge is 72 nC at 10 V.
The part comes in an 8-lead PowerVDFN package, also called PowerFlat 5x6 mm.
Maximum gate-source voltage is ±20 V.
No official successor or second-source alternate is recorded on this line — for dual-sourcing, check the STripFET VII family for pin-compatible parts with similar Rds(on) and voltage class.
