STL10N3LLH5

STMicroelectronics · STripFET™ V Series

STMicroelectronics STripFET™ V N-Channel MOSFET, STL10N3LLH5, 30V Vdss, 9A Id, 19mOhm Rds(on) max at 4.5A/10V, 6nC Qg, 8-PowerVDFN PowerFlat 3.3x3.3mm, -55°C to 150°C.

STMicroelectronics STL10N3LLH5
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STL10N3LLH5 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ V
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation2W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±22V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs19mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds900 pF @ 25 V

Technical details

30V N-channel switch for 12V rails

It is built for low-voltage DC-DC conversion, load switching, and battery management in the 5V to 12V range — the 30V Vdss gives headroom on a 12V rail without forcing a larger package.

On-resistance and gate charge — switching loss budget

Maximum Rds(on) is 19 mOhm at 4.5A drain current with 10V gate drive. That figure is specified at 25°C junction; at 150°C the on-resistance roughly doubles, so the conduction loss at full load and high ambient needs to be derated accordingly. Gate charge totals 6 nC at 4.5V Vgs. The low Qg keeps switching losses manageable at moderate frequencies. Input capacitance Ciss is 900 pF at 25V Vds. This sets the drive impedance requirement for clean turn-on without ringing; a gate resistor in the 10-22 Ohm range is typical for this capacitance level.

The part comes in an 8-lead PowerVDFN, supplier device package PowerFlat 3.3x3.3 mm. Without that thermal connection, the 2W (Ta) power dissipation limit applies; with a good board thermal design, the 50W (Tc) limit is reachable. Mounting is surface-mount only.

The 150°C ceiling allows the part to run hot in a compact design as long as the board-level thermal resistance keeps Tj below the absolute maximum. Gate-source voltage is rated ±22V maximum, so standard 12V gate drive signals are well within the safe operating area. The threshold voltage is 2.5V maximum at 250 µA drain current, meaning the part is fully enhanced by a 5V logic-level gate signal.

ROHS3 compliant.

STL10N3LLH5
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