100 V, 80 A, 7.3 mOhm — the conduction-loss floor
The STL100N10F7 is an N-channel MOSFET from STMicroelectronics' DeepGATE™ and STripFET™ VII families, rated for 100 V drain-source voltage and 80 A continuous drain current at case temperature. The 7.3 mOhm maximum on-resistance at 19 A with 10 V gate drive sets the conduction-loss floor for a high-current switching or OR-ing application.
Thermal headroom and package constraints
The PowerFlat 5x6 mm (PowerVDFN 8-pin) package dissipates 5 W in still air at the board and 100 W when the case is held at 25°C. That 100 W Tc rating is only reachable with a large copper area on the drain pad and forced airflow; in a real board the thermal impedance is set by the PCB layout, not the datasheet max.