STI55NF03L

STMicroelectronics · STripFET™ II Series

STMicroelectronics STripFET™ II, STI55NF03L, N-Channel MOSFET, 30V Vdss, 55A Id, 13mOhm Rds(on), 27nC Qg, TO-262-3 (I2PAK), Through Hole, -60°C to 175°C.

STMicroelectronics STI55NF03L
[IN STOCK] In Stock: 38 pcs
$3.28/ pc

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Technical specifications

STI55NF03L specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C55A (Tc)
Power dissipation80W (Tc)
Operating temperature-60°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs13mOhm @ 27.5A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1265 pF @ 25 V

Technical details

Low-voltage, high-current switching with logic-level drive

The ±16 V maximum gate-source rating gives headroom for noisy supply rails.

Through-hole package — assembly and thermal considerations

The TO-262 (I2PAK) through-hole package with long leads suits manual assembly, rework, and high-vibration environments where a soldered through-hole joint is preferred over a surface-mount solder fillet. The exposed metal tab on the top provides a direct thermal path to a heatsink or chassis; plan for a thermal pad or insulating washer if the tab is at drain potential. Input capacitance (Ciss) is 1265 pF at 25 V drain-source, which influences gate-drive rise time and switching losses — factor it into the gate resistor calculation for the target switching frequency.

No end-of-life notification or last-time-buy schedule is published.

STI55NF03L
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