STI33N65M2

STMicroelectronics · MDmesh™ M2 Series

STMicroelectronics MDmesh™ M2 series N-Channel MOSFET, STI33N65M2, 650 V Vdss, 24 A continuous drain, 140 mOhm Rds(on) at 10 V, 41.5 nC gate charge, I2PAK through-hole package.

STMicroelectronics STI33N65M2
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Technical specifications

STI33N65M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs140mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs41.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1790 pF @ 100 V

Technical details

The STI33N65M2 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ M2 series, rated for 650 V drain-to-source and 24 A continuous drain current at 25 °C case temperature. It comes in a through-hole I2PAK (TO-262) package — the long-lead version that lets you bolt it to a heatsink without worrying about board clearance. The 140 mOhm typical on-resistance at 10 V gate drive keeps conduction losses manageable in a 190 W dissipation budget, and the 41.5 nC gate charge means a standard gate driver can switch it without a lot of dead-time compensation.

Package and mounting — I2PAK field note

The I2PAK (TO-262) package has three leads that go through the board, plus a metal tab that gets screwed to a heatsink.

STI33N65M2
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