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STMicroelectronics STI24N60M2

STI24N60M2 MOSFET N-CH 600V 18A I2PAK, MDmesh II Plus

MPNSTI24N60M2
End of Life

STMicroelectronics MDmesh™ II Plus series, STI24N60M2, N-Channel MOSFET, 600V Vdss, 18A Id, 190mOhm Rds(on) at 10V, 29nC Qg, TO-262-3 (I2PAK), Through Hole, -55°C to 150°C.

$2.68Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STI24N60M2 Technical Specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 100 V

Product details

600 V N-channel MOSFET in I2PAK — offline power conversion workhorse

It is housed in a through-hole TO-262 (I2PAK) package, intended for high-voltage switching applications such as power-factor-correction stages, flyback and forward converters, and two-switch topologies in offline power supplies.

On-resistance and gate charge — switching loss trade-off

Maximum on-resistance is 190 mOhm at a 9 A drain current with 10 V gate drive. The total gate charge at 10 V is 29 nC, which keeps the gate-drive power modest — a practical figure for a 600 V, 18 A device in hard-switched topologies. Input capacitance measures 1060 pF at 100 V drain-source bias.

Temperature range and thermal design

Maximum power dissipation is 150 W at case temperature, which demands a heatsink sized for the application's duty cycle. The through-hole I2PAK package provides a direct thermal path to the PCB or heatsink via the metal tab.

Frequently asked questions

Is STI24N60M2 RoHS compliant?

Yes, the STI24N60M2 is listed as ROHS3 compliant.

Can STI24N60M2 be used in high-frequency applications?

With a gate charge of 29 nC at 10 V and input capacitance of 1060 pF, the STI24N60M2 is suited for switching frequencies typical of offline power converters (tens to low hundreds of kHz). The low Qg relative to its current rating keeps gate-drive losses manageable.