STI24N60M2

STMicroelectronics · MDmesh™ II Plus Series

STMicroelectronics MDmesh™ II Plus series, STI24N60M2, N-Channel MOSFET, 600V Vdss, 18A Id, 190mOhm Rds(on) at 10V, 29nC Qg, TO-262-3 (I2PAK), Through Hole, -55°C to 150°C.

STMicroelectronics STI24N60M2
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Technical specifications

STI24N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 100 V

Technical details

600 V N-channel MOSFET in I2PAK — offline power conversion workhorse

It is housed in a through-hole TO-262 (I2PAK) package, intended for high-voltage switching applications such as power-factor-correction stages, flyback and forward converters, and two-switch topologies in offline power supplies.

On-resistance and gate charge — switching loss trade-off

Input capacitance measures 1060 pF at 100 V drain-source bias.

Temperature range and thermal design

Maximum power dissipation is 150 W at case temperature, which demands a heatsink sized for the application's duty cycle. The through-hole I2PAK package provides a direct thermal path to the PCB or heatsink via the metal tab.

STI24N60M2
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