STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V Vdss, 12 A continuous drain, 330 mOhm Rds(on) at 10 V, 20 nC gate charge, I2PAK (TO-262) through-hole package, 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 330mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 770 pF @ 100 V |
The STI18N65M2: Total gate charge is 20 nC at 10 V, with an input capacitance of 770 pF at 100 V drain-source.
Housed in a TO-262-3 long-lead I²Pak (I2PAK) through-hole package, the STI18N65M2 is intended for board-level mounting where the tab is soldered to a copper island on the PCB.
The 20 nC gate charge and 770 pF input capacitance are moderate — suitable for switching frequencies up to the low hundreds of kilohertz in offline flyback, PFC, and resonant converters. For very high frequencies (above 500 kHz), a device with lower Qg and Ciss would be more efficient.