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STMicroelectronics STI18N65M2
STMicroelectronics

STI18N65M2 MOSFET N-CH 650V 12A I2PAK, 330mOhm

MPNSTI18N65M2
End of Life

STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 650 V Vdss, 12 A continuous drain, 330 mOhm Rds(on) at 10 V, 20 nC gate charge, I2PAK (TO-262) through-hole package, 150 °C junction temperature.

$2.8Ref. price · indicative, final on quote
STI18N65M2 datasheet
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STI18N65M2 Technical Specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation110W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs330mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds770 pF @ 100 V

Product details

Gate charge and switching profile

The STI18N65M2: Total gate charge is 20 nC at 10 V, with an input capacitance of 770 pF at 100 V drain-source.

Package and thermal path

Housed in a TO-262-3 long-lead I²Pak (I2PAK) through-hole package, the STI18N65M2 is intended for board-level mounting where the tab is soldered to a copper island on the PCB. The 110 W power dissipation rating assumes the case is held at 25 °C — real-world derating depends on the PCB copper area and airflow. The 150 °C maximum junction temperature sets the thermal limit for continuous operation.

Frequently asked questions

Can STI18N65M2 be used in high-frequency applications?

The 20 nC gate charge and 770 pF input capacitance are moderate — suitable for switching frequencies up to the low hundreds of kilohertz in offline flyback, PFC, and resonant converters. For very high frequencies (above 500 kHz), a device with lower Qg and Ciss would be more efficient.