STH6N95K5-2

STMicroelectronics · MDmesh™ K5 Series

STMicroelectronics STH6N95K5-2, MDmesh™ K5 series, N-channel MOSFET, 950 V Vdss, 6 A Id, 1.25 Ohm Rds(on), H2Pak-2 surface-mount package, -55°C to 150°C operating temperature.

STMicroelectronics STH6N95K5-2
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STH6N95K5-2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.25Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Technical details

950 V MDmesh K5 MOSFET in a surface-mount H2Pak-2

It is built with ST's MDmesh technology, which reduces on-resistance per silicon area for high-voltage switching. The 1.25 Ohm maximum Rds(on) at 3 A and 10 V drive keeps conduction losses manageable in a 150 W-class flyback converter or PFC stage.

These numbers tell the drive circuit designer how much current the gate driver must supply to hit the target switching frequency.

Package and thermal path for the layout engineer

The H2Pak-2 package (TO-263-3, D²Pak with 2 leads plus tab) is a surface-mount D²Pak variant with a large exposed metal tab on the bottom.

It is ROHS3 compliant.

STH6N95K5-2
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