950 V MDmesh K5 MOSFET in a surface-mount H2Pak-2
It is built with ST's MDmesh technology, which reduces on-resistance per silicon area for high-voltage switching. The 1.25 Ohm maximum Rds(on) at 3 A and 10 V drive keeps conduction losses manageable in a 150 W-class flyback converter or PFC stage.
Gate charge and switching speed for SMPS designs
Total gate charge is 13 nC at 10 V, and input capacitance is 450 pF at 100 V drain-source. These numbers tell the drive circuit designer how much current the gate driver must supply to hit the target switching frequency. For a 100 kHz hard-switched converter, the average gate drive current is under 2 mA, so a standard driver IC handles it without extra heat sinking.
Package and thermal path for the layout engineer
The H2Pak-2 package (TO-263-3, D²Pak with 2 leads plus tab) is a surface-mount D²Pak variant with a large exposed metal tab on the bottom. Maximum power dissipation is 110 W at case temperature, but the real thermal budget depends on the PCB copper area under the tab.
It is ROHS3 compliant.
