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STMicroelectronics STH275N8F7-6AG
STMicroelectronics

STH275N8F7-6AG N-Channel MOSFET, 80V 180A, AEC-Q101, H2PAK-6

MPNSTH275N8F7-6AG
End of Life

STMicroelectronics STripFET™ F7 STH275N8F7-6AG, N-channel MOSFET, 80 Vdss, 180 A continuous drain, 2.1 mOhm Rds(on) max at 90 A, 10 V gate drive, AEC-Q101 qualified, -55°C to 175°C junction temperature, H2PAK-6 surface-mount package.

$6.57Ref. price · indicative, final on quote
STH275N8F7-6AG datasheet
PackagingTO-263-7, D2PAK (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STH275N8F7-6AG Technical Specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation315W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-7, D2PAK (6 Leads + Tab)
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs2.1mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs193 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13600 pF @ 50 V

Product details

80 V, 180 A automotive-grade power switch

Its AEC-Q101 qualification confirms suitability for automotive under-hood and chassis-domain applications where reliability screening is mandatory.

Gate charge totals 193 nC at 10 V — a figure that sets the drive current required from the gate driver for the target switching frequency. At 100 kHz, the average gate drive current is roughly 19 mA, well within the capability of most automotive-grade gate drivers. Input capacitance is 13600 pF at 50 V drain-source; this affects the switching speed and the driver's peak current capability during turn-on and turn-off transitions.

Package and thermal management for the H2PAK-6

Maximum power dissipation is 315 W at case temperature, but the actual thermal performance depends on the PCB copper area and airflow; a multi-layer board with thermal vias under the tab is the standard approach for high-current designs.

Lifecycle and sourcing posture

The part is ROHS3 compliant, which simplifies compliance with current environmental regulations across automotive and industrial markets.

Frequently asked questions

Is STH275N8F7-6AG AEC-Q101 qualified?

Yes, the STH275N8F7-6AG carries AEC-Q101 qualification, making it suitable for automotive applications that require device-level reliability screening per the AEC-Q101 standard.

What is the Rds(on) of STH275N8F7-6AG?

The maximum on-resistance is 2.1 mOhm at 90 A drain current with 10 V gate drive. This value is specified at 25 °C junction temperature; on-resistance increases with temperature per the normalised curve in the datasheet.

Which part can replace STH275N8F7-6AG if it is out of stock?

No official pin-compatible second-source or replacement is listed in the available documentation. For supply continuity, contact us with your BOM quantity and we can cross-reference alternatives within the STripFET F7 family or from other automotive-grade N-channel MOSFET suppliers.