Skip to main content
STMicroelectronics STH275N8F7-6AG

STH275N8F7-6AG N-Channel MOSFET, 80V 180A, AEC-Q101, H2PAK-6

MPNSTH275N8F7-6AG
End of Life

STMicroelectronics STripFET™ F7 STH275N8F7-6AG, N-channel MOSFET, 80 Vdss, 180 A continuous drain, 2.1 mOhm Rds(on) max at 90 A, 10 V gate drive, AEC-Q101 qualified, -55°C to 175°C junction temperature, H2PAK-6 surface-mount package.

$6.57Ref. price · indicative, final on quote
PackagingTO-263-7, D2PAK (6 Leads + Tab)
RoHSROHS3 Compliant
SeriesSTripFET™ F7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STH275N8F7-6AG specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation315W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-7, D2PAK (6 Leads + Tab)
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs2.1mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs193 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13600 pF @ 50 V

Product details

80 V, 180 A automotive-grade power switch

Its AEC-Q101 qualification confirms suitability for automotive under-hood and chassis-domain applications where reliability screening is mandatory.

Gate charge totals 193 nC at 10 V — a figure that sets the drive current required from the gate driver for the target switching frequency. Input capacitance is 13600 pF at 50 V drain-source; this affects the switching speed and the driver's peak current capability during turn-on and turn-off transitions.

Package and thermal management for the H2PAK-6

Frequently asked questions

Is STH275N8F7-6AG AEC-Q101 qualified?

Yes, the STH275N8F7-6AG carries AEC-Q101 qualification, making it suitable for automotive applications that require device-level reliability screening per the AEC-Q101 standard.

What is the Rds(on) of STH275N8F7-6AG?

The maximum on-resistance is 2.1 mOhm at 90 A drain current with 10 V gate drive. This value is specified at 25 °C junction temperature; on-resistance increases with temperature per the normalised curve in the datasheet.

Which part can replace STH275N8F7-6AG if it is out of stock?

No official pin-compatible second-source or replacement is listed in the available documentation. For supply continuity, contact us with your BOM quantity and we can cross-reference alternatives within the STripFET F7 family or from other automotive-grade N-channel MOSFET suppliers.