STMicroelectronics · STripFET™ F7 Series
STMicroelectronics STripFET™ F7 STH275N8F7-6AG, N-channel MOSFET, 80 Vdss, 180 A continuous drain, 2.1 mOhm Rds(on) max at 90 A, 10 V gate drive, AEC-Q101 qualified, -55°C to 175°C junction temperature, H2PAK-6 surface-mount package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ F7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 315W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.1mOhm @ 90A, 10V |
| Gate charge (Qg) (Max) @ vgs | 193 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 13600 pF @ 50 V |
Its AEC-Q101 qualification confirms suitability for automotive under-hood and chassis-domain applications where reliability screening is mandatory.
Gate charge totals 193 nC at 10 V — a figure that sets the drive current required from the gate driver for the target switching frequency. Input capacitance is 13600 pF at 50 V drain-source; this affects the switching speed and the driver's peak current capability during turn-on and turn-off transitions.
