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STMicroelectronics STH270N8F7-6

STH270N8F7-6 MOSFET N-Ch 80V 180A H2PAK, 2.1 mOhm

MPNSTH270N8F7-6
End of Life

STMicroelectronics DeepGATE™, STripFET™ VII, STH270N8F7-6, N-Channel MOSFET, 80 V Vdss, 180 A Id, 2.1 mOhm Rds(on) at 90 A, 10 V, 193 nC Qg, H²PAK (TO-263-7), -55°C to 175°C.

$5.15Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STH270N8F7-6 Technical Specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation315W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.1mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs193 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13600 pF @ 50 V

Product details

80 V, 180 A, 2.1 mOhm — high-current switching MOSFET

The 193 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies up to the mid-hundred-kHz range.

Conduction loss and thermal budget

At 2.1 mOhm Rds(on) the conduction loss at 90 A is under 17 W — the 315 W power dissipation rating at Tc=25°C gives substantial headroom, but the real thermal limit is set by the junction-to-case thermal resistance and the heatsink. Input capacitance Ciss is 13600 pF at 50 V Vds — the gate driver must source 193 nC per switching cycle. At 100 kHz the average gate drive current is 19.3 mA; a driver rated for 2 A peak handles the capacitive load without excessive rise time.

Package and mounting

Supplied in the H²PAK package (TO-263-7, 6 leads plus tab), a surface-mount D²Pak variant with a large copper tab for solder-down heatsinking. Surface mount assembly with standard reflow profiles;.

Lifecycle and supply posture

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of the STH270N8F7-6?

The maximum Rds(on) is 2.1 mOhm at 90 A drain current with 10 V gate drive. This is the on-resistance at 25°C junction temperature; expect it to increase by roughly 50% at 125°C junction per the typical MOSFET temperature coefficient.

Is the STH270N8F7-6 lead-free?

Yes, it is ROHS3 compliant, meaning it meets the European RoHS directive for lead and other restricted substances.

What package does the STH270N8F7-6 come in?

It is supplied in the H²PAK package, which is a TO-263-7 variant with 6 leads plus a drain tab.