80 V, 180 A, 2.1 mOhm — high-current switching MOSFET
Conduction loss and thermal budget
At 2.1 mOhm Rds(on) the conduction loss at 90 A is under 17 W — the 315 W power dissipation rating at Tc=25°C gives substantial headroom, but the real thermal limit is set by the junction-to-case thermal resistance and the heatsink. Input capacitance Ciss is 13600 pF at 50 V Vds — the gate driver must source 193 nC per switching cycle. At 100 kHz the average gate drive current is 19.3 mA; a driver rated for 2 A peak handles the capacitive load without excessive rise time.
Supplied in the H²PAK package (TO-263-7, 6 leads plus tab), a surface-mount D²Pak variant with a large copper tab for solder-down heatsinking. Surface mount assembly with standard reflow profiles;.
ROHS3 compliant.