STGWT20H65FB

STMicroelectronics

STMicroelectronics STGWT20H65FB, Trench Field Stop IGBT, 650 V Vces, 40 A Ic, 168 W, 120 nC Qg, TO-3P-3, Through Hole, -55 to 175 °C.

STMicroelectronics STGWT20H65FB
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Technical specifications

STGWT20H65FB specifications
Parameter / AttributeSpecification / Value
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)40 A
Current - collector pulsed80 A
Power - max168 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge120 nC
CaseTO-3P-3, SC-65-3
Test condition400V, 20A, 10Ohm, 15V
Switching energy77µJ (on), 170µJ (off)
Td (on/off) @ 25°C30ns/139ns
Vce(on) (Max) @ vge, ic2V @ 15V, 20A

Technical details

650 V Trench Field Stop — the switching-loss anchor for 400 V bus designs

The STGWT20H65FB is a 650 V, 40 A Trench Field Stop IGBT from STMicroelectronics, housed in a TO-3P through-hole package. It is specified for hard-switching applications such as motor drives, PFC stages, and induction heating where the 400 V test condition (400 V, 20 A, 10 Ohm, 15 V) directly mirrors the nominal bus voltage.

Switching energy and gate drive budget

Total switching energy at the 400 V / 20 A test point is 77 µJ turn-on and 170 µJ turn-off. The off-loss dominates the thermal calculation — the designer should size the heatsink for the turn-off component, especially at higher switching frequencies. Gate charge is 120 nC at 15 V drive. A typical gate driver delivering 1 A peak can charge the gate in roughly 120 ns; the 30 ns turn-on delay and 139 ns turn-off delay (at 25 °C) are consistent with a moderate-speed IGBT suited to 10–40 kHz operation.

-55 to 175 °C junction — full military temperature coverage

STGWT20H65FB
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