650 V, 60 A Trench Field Stop IGBT in TO-247-3
The STGWA30M65DF2 is a 650 V, 60 A Trench Field Stop IGBT from STMicroelectronics, housed in a through-hole TO-247-3 package with long leads. It targets hard-switching applications such as motor drives, uninterruptible power supplies, and power-factor-correction stages where low conduction and switching losses are required.
Conduction and switching loss at 30 A
At the test condition of 400 V, 30 A, 10 Ohm gate resistor, and 15 V gate drive, the typical Vce(on) is 2 V — this sets the conduction loss floor at 60 W for a 30 A load. The switching energy totals 1.26 mJ per cycle (300 µJ turn-on, 960 µJ turn-off), which drives the thermal design for hard-switched topologies at moderate frequencies. The 80 nC total gate charge and 31.6 ns / 115 ns turn-on/turn-off delay times (at 25°C) give the gate-driver designer the numbers needed to size the drive current and set dead-time margins. The co-packaged diode has a 140 ns reverse recovery time, relevant for inductive load clamping.
Junction temperature range and thermal budget
The 258 W maximum power dissipation assumes the case is held at 25°C; real-world derating follows the datasheet curve.