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STMicroelectronics STGW80H65DFB

STGW80H65DFB IGBT, 650V 120A Trench Field Stop, TO-247

MPNSTGW80H65DFB
End of Life

STMicroelectronics STGW80H65DFB, Trench Field Stop IGBT, 650 V Vces, 120 A Ic, 469 W max power, Gate Charge 414 nC, TO-247-3, Through Hole, -55 to 175 °C.

$7.14Ref. price · indicative, final on quote
STMicroelectronics STGW80H65DFB datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STGW80H65DFB specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)120 A
Current - collector pulsed240 A
Power - max469 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge414 nC
CaseTO-247-3
Test condition400V, 80A, 10Ohm, 15V
Switching energy2.1mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C84ns/280ns
Vce(on) (Max) @ vge, ic2V @ 15V, 80A
Reverse recovery time85 ns

Product details

650 V, 120 A Trench Field Stop IGBT in TO-247

The STMicroelectronics STGW80H65DFB is a 650 V, 120 A Trench Field Stop IGBT in a TO-247-3 through-hole package. It is designed for hard-switching applications such as motor drives, uninterruptible power supplies, welding machines, and solar inverters where low conduction and switching losses are critical. The Trench Field Stop structure delivers a low saturation voltage of 2 V at 80 A and 15 V gate drive, combined with fast switching — turn-on energy of 2.1 mJ and turn-off energy of 1.5 mJ under the test condition of 400 V, 80 A, 10 ohm gate resistor, and 15 V gate drive.

ST lists this device as Active with ROHS3 compliance.

Frequently asked questions

Is STGW80H65DFB RoHS compliant?

Yes, STGW80H65DFB is ROHS3 compliant per STMicroelectronics.