STGW40H65FB

STMicroelectronics

STMicroelectronics STGW40H65FB Trench Field Stop IGBT, 650 V, 80 A, 283 W, TO-247-3 through-hole package, -55°C to 175°C junction temperature.

STMicroelectronics STGW40H65FB
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[IN STOCK] In Stock: 4 pcs
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Technical specifications

STGW40H65FB specifications
Parameter / AttributeSpecification / Value
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)80 A
Current - collector pulsed160 A
Power - max283 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge210 nC
CaseTO-247-3
Test condition400V, 40A, 5Ohm, 15V
Switching energy498mJ (on), 363mJ (off)
Td (on/off) @ 25°C40ns/142ns
Vce(on) (Max) @ vge, ic2.3V @ 15V, 40A

Technical details

650 V, 80 A Trench Field Stop IGBT in TO-247-3

The STMicroelectronics STGW40H65FB is a Trench Field Stop IGBT rated for 650 V collector-emitter breakdown and 80 A continuous collector current, housed in a TO-247-3 through-hole package. It targets motor drives, power supplies, and welding inverters where low saturation voltage and fast switching are required.

Switching losses and thermal budget

Tested at 400 V, 40 A with a 5 Ω gate resistor and 15 V gate drive, the part switches with 498 mJ turn-on energy and 363 mJ turn-off energy — numbers that drive the heatsink design for a given switching frequency. The 210 nC total gate charge tells the gate driver what current it must deliver to hit the target switching speed.

The TO-247-3 package with through-hole mounting allows direct heatsink attachment via the metal tab — the thermal pad area on the PCB is the heatsink itself, not a copper pour.

STGW40H65FB
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