STGP19NC60KD

STMicroelectronics · PowerMESH™ Series

STMicroelectronics PowerMESH™ series, IGBT, Through Hole, TO-220-3, 600 V Vces, 35 A Ic, 55 nC Gate Charge, 125 W max, -55 to 150 °C.

STMicroelectronics STGP19NC60KD
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Technical specifications

STGP19NC60KD specifications
Parameter / AttributeSpecification / Value
SeriesPowerMESH™
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)35 A
Current - collector pulsed75 A
Power - max125 W
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Gate charge55 nC
CaseTO-220-3
Test condition480V, 12A, 10Ohm, 15V
Switching energy165µJ (on), 255µJ (off)
Td (on/off) @ 25°C30ns/105ns
Vce(on) (Max) @ vge, ic2.75V @ 15V, 12A
Reverse recovery time31 ns

Technical details

The STMicroelectronics STGP19NC60KD is a 600 V, 35 A IGBT from the PowerMESH™ series, housed in a through-hole TO-220-3 package. The 600 V collector-emitter breakdown and 35 A continuous collector current set the operating envelope; the 125 W maximum power dissipation defines the thermal budget. The 55 nC gate charge is moderate — a standard gate driver IC can handle it without excessive drive current. The 31 ns reverse recovery time of the internal diode helps keep switching losses in check in hard-switched topologies.

The TO-220 package with through-hole mounting is a workhorse for point-of-load switching stages where board-level heatsinking or a clip-on heatsink is practical.

STGP19NC60KD
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