STGF20H60DF

STMicroelectronics

STMicroelectronics Trench Field Stop IGBT, 600 V, 40 A, 37 W, TO-220-3 Full Pack, Through Hole, Tube.

STMicroelectronics STGF20H60DF
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Technical specifications

STGF20H60DF specifications
Parameter / AttributeSpecification / Value
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)40 A
Current - collector pulsed80 A
Power - max37 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge115 nC
CaseTO-220-3 Full Pack
Test condition400V, 20A, 10Ohm, 15V
Switching energy209µJ (on), 261µJ (off)
Td (on/off) @ 25°C42.5ns/177ns
Vce(on) (Max) @ vge, ic2V @ 15V, 20A
Reverse recovery time90 ns

Technical details

600 V, 40 A — the voltage and current ceiling

The STGF20H60DF is a Trench Field Stop IGBT from STMicroelectronics, rated for 600 V collector-emitter breakdown and 40 A continuous collector current, with a pulsed current capability of 80 A. The 115 nC total gate charge tells the gate-drive circuit what it has to push each cycle — at 20 kHz switching, that's 2.3 mA average gate current, a number the driver's sink/source rating must clear.

Switching energy and the test condition

Switching losses are characterised at 400 V, 20 A, 10 Ohm gate resistor, 15 V gate drive: 209 µJ turn-on, 261 µJ turn-off. The 42.5 ns turn-on delay and 177 ns turn-off delay at 25°C are fast enough for hard-switched topologies up to the 20–30 kHz range. The 90 ns reverse recovery time of the co-packaged diode is the tail current you budget in the turn-on loss calculation.

Full-pack isolation — no insulating pad needed

The TO-220 Full Pack (TO-220FP) package has a fully isolated tab. That saves the mica pad and bushings in a through-hole assembly — just grease and bolt to the heatsink.

STGF20H60DF
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