STGF15M65DF2

STMicroelectronics

STMicroelectronics STGF15M65DF2 Trench Field Stop IGBT, 650 V collector-emitter breakdown, 30 A continuous collector current, 2 V Vce(on) @ 15 V, 15 A, TO-220FP through-hole package.

STMicroelectronics STGF15M65DF2
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Technical specifications

STGF15M65DF2 specifications
Parameter / AttributeSpecification / Value
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)30 A
Current - collector pulsed60 A
Power - max31 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge45 nC
CaseTO-220-3 Full Pack
Test condition400V, 15A, 12Ohm, 15V
Switching energy90µJ (on), 450µJ (off)
Td (on/off) @ 25°C24ns/93ns
Vce(on) (Max) @ vge, ic2V @ 15V, 15A
Reverse recovery time142 ns

Technical details

Trench Field Stop IGBT for hard-switched converters

The STGF15M65DF2 is a 650 V, 30 A trench field-stop IGBT from STMicroelectronics in a TO-220FP full-pack, through-hole package. It is designed for medium-frequency hard-switching applications such as induction heating, motor drives, and uninterruptible power supplies where a low saturation voltage and controlled switching losses matter.

That is the number to plug into the conduction-loss calculation for your thermal model. The switching energy at 400 V, 15 A, 12 Ω gate resistor is 90 µJ turn-on and 450 µJ turn-off — the off-energy dominates, so the gate drive circuit and snubber design should be sized around that 450 µJ figure. A 45 nC total gate charge keeps the drive power manageable with a standard bootstrap or isolated supply.

STGF15M65DF2
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