STMicroelectronics PowerMESH™ IGBT, 442 V Collector-Emitter Breakdown, 40 A Collector, 200 W, Surface Mount D2PAK-3 (TO-263), -55°C to 175°C TJ.
| Parameter | Value |
|---|---|
| Series | PowerMESH™ |
| Input type | Standard |
| Mounting | Surface Mount |
| Voltage - collector emitter breakdown | 442 V |
| Current - collector (Ic) | 40 A |
| Current - collector pulsed | 80 A |
| Power - max | 200 W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Gate charge | 46 nC |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Test condition | 320V, 20A, 1kOhm, 5V |
| Switching energy | 5mJ (on), 12.9mJ (off) |
| Td (on/off) @ 25°C | 1µs/12.1µs |
| Vce(on) (Max) @ vge, ic | 2V @ 4.5V, 20A |
The STGB20NB41LZT4 is a 442 V, 40 A IGBT from ST's PowerMESH™ series, housed in a surface-mount D2PAK (TO-263) package.
The D2PAK (TO-263-3) footprint is standard for surface-mount power devices. The tab is the collector; the two leads are gate and emitter.
Yes, the D2PAK (TO-263-3) footprint is standard. Confirm your land pattern matches the TO-263AB variant — the tab is the collector, and the two leads are gate and emitter.
Both share the same 442 V, 40 A PowerMESH die. The STGB20NB41LZT4 is surface-mount D2PAK; the STGP20NB41LZT4 is through-hole TO-220. Choose the package that fits your assembly process.