600 V, 20 A IGBT with co-packaged fast diode
The STGB10NC60KDT4 is a 600 V, 20 A IGBT from STMicroelectronics' PowerMESH™ series, housed in a D2PAK (TO-263-3) surface-mount package. It integrates a fast-recovery diode with a 22 ns reverse recovery time, making it suited for hard-switched topologies like motor drives, PFC stages, and induction heating where the diode's recovery characteristic directly affects turn-on loss and EMI.
Switching losses and thermal budget at 390 V, 5 A
At 390 V, 5 A, 10 Ω gate resistor, and 15 V gate drive, the part switches 55 µJ on and 85 µJ off. The 19 nC total gate charge presents a moderate capacitive load to the gate driver.
Active production, no LTB concern
It is ROHS3 compliant.