650 V N-channel MOSFET in a fully isolated TO-220FP
The STMicroelectronics STFU9N65M2 is a 650 V N-channel power MOSFET from the MDmesh™ M2 series, built with a planar technology that balances on-resistance and switching performance.
On-resistance and gate charge profile
Input capacitance (Ciss) measures 315 pF at 100 V drain-source, a value that keeps the Miller plateau narrow and supports clean switching up to several hundred kilohertz in resonant or quasi-resonant topologies.
Temperature range and thermal management
Maximum power dissipation is 20 W at case temperature, which, combined with the TO-220FP's isolated backside, demands a heatsink for sustained operation above a few watts. The full-pack construction also simplifies board-level thermal simulation: the tab is at the same potential as the heatsink pad, so no thermal pad or mica insulator is needed, and the thermal resistance from junction to case is specified without an isolation layer in the path.