650 V, 20 A N-channel in TO-220FP — MDmesh M2
The STMicroelectronics STFU28N65M2 is a 650 V, 20 A N-channel power MOSFET built on the second-generation MDmesh M2 super-junction platform. The full-pack TO-220FP isolates the back tab electrically — no extra insulating pad needed against the heatsink. This saves assembly time and avoids the thermal penalty of an added interface layer in single-ended PSU or lighting ballast designs.
Total gate charge Qg is 35 nC at Vgs=10 V, which means the driver needs only about 3.5 mA average current to switch at 100 kHz. The input capacitance Ciss of 1440 pF at Vds=100 V sets the Miller plateau width — the actual turn-on delay depends on the gate drive source impedance, but the low Qg keeps the transition energy within the TO-220FP's thermal budget. The 4 V threshold at 250 µA drain current is typical for super-junction MOSFETs — it provides enough noise margin for 10 V gate drive while staying low enough to be driven by standard PWM controllers without a booster stage.
Temperature range and compliance
Rated for continuous operation from -55°C to 150°C junction temperature — suitable for industrial PSUs, motor drives, and lighting that see ambient temperatures above 85°C. The wide band also covers cold-start conditions in outdoor telecom enclosures.