STFU24N60M2

STMicroelectronics

STMicroelectronics MDmesh M2 series, N-Channel MOSFET, 600 V Drain-Source Voltage, 18 A Continuous Drain Current, 190 mOhm Rds(on) at 9 A, 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.

STMicroelectronics STFU24N60M2
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Technical specifications

STFU24N60M2 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 100 V

Technical details

Typical applications include switching power supplies, power factor correction circuits, and motor drives where high-voltage switching and low conduction losses are required.

The 600 V drain-source voltage (Vdss) suits off-line flyback and PFC stages. Gate charge is 29 nC at 10 V. Input capacitance measures 1060 pF at 100 V drain-source.

The TO-220 Full Pack (TO-220FP) is a fully molded, through-hole package with the metal tab completely encapsulated in plastic. This provides electrical isolation between the drain tab and the heatsink.

The base product number STFU24 helps identify the family for cross-referencing.

STFU24N60M2
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