Obsolete — sourcing this STFU16N65M2 now
STMicroelectronics lists the STFU16N65M2 as Obsolete. No LTB window remains, so every buy is a spot-market transaction.
650 V, 11 A — where this MOSFET fits
Gate drive and switching — what the numbers mean
Gate charge is 19.5 nC at 10 V, and input capacitance measures 718 pF at 100 V drain bias. These are low figures for a 650 V device of this current rating, which means the gate driver sees a light load — a standard 1 A gate-driver IC or even a discrete totem-pole pair can switch it cleanly. The 4 V maximum threshold at 250 µA means a 10 V gate drive is needed to achieve the rated Rds(on); at 5 V drive the on-resistance will be significantly higher, so check the transfer curve if the gate supply is lower than 10 V.
Maximum power dissipation is 25 W at case temperature. The TO-220FP package has higher thermal resistance than a standard TO-220 because the plastic body isolates the tab — budget for a larger heatsink or forced airflow if the dissipation approaches the 25 W ceiling.