800 V N-channel in a fully isolated TO-220FP
STFU13N80K5 is an N-Channel MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package.
This is the conduction loss figure the designer uses for worst-case efficiency calculations at full load.

STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 800 V drain-source, 12 A continuous drain at 25°C, 450 mOhm Rds(on) at 6 A and 10 V, TO-220-3 Full Pack through-hole package, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 870 pF @ 100 V |
STFU13N80K5 is an N-Channel MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package.
This is the conduction loss figure the designer uses for worst-case efficiency calculations at full load.
The maximum Rds(on) is 450 mOhm, measured at 6 A drain current and 10 V gate drive. This is the worst-case value at 25°C junction temperature; actual on-resistance increases with temperature, so derate for the operating junction temperature in your application.
Continuous drain current is rated at 12 A at 25°C case temperature. The 800 V drain-source voltage rating and the 35 W maximum power dissipation define the safe operating area — the actual current capability is limited by junction temperature rise and heatsink thermal resistance in the end application.
No separate lead-free statement is needed beyond the ROHS3 compliance marking.