STMicroelectronics MDmesh M2 series, N-Channel MOSFET, 650 V Vdss, 10 A continuous drain, 430 mOhm Rds(on) at 5 A 10 V, 17 nC gate charge, TO-220-3 Full Pack through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 430mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 590 pF @ 100 V |
The STFU13N65M2 is an N-channel 650 V 10 A MOSFET in the TO-220FP full-pack package.
Maximum on-resistance is 430 mOhm at 5 A drain current with 10 V gate drive. That figure sets the conduction loss floor for a given RMS current in a flyback primary or PFC boost stage — at 2 A RMS the dissipation is under 2 W, leaving headroom inside the 25 W power dissipation limit at the case. Gate charge is 17 nC at 10 V. Input capacitance is 590 pF at 100 V drain bias.
Maximum Rds(on) is 430 mOhm at 5 A drain current with 10 V gate drive. This is the conduction loss spec to use for thermal budgeting in a power stage.