600 V N-channel in a fully isolated TO-220FP
Conduction loss and gate drive budget
That 750 mOhm is the number to plug into your conduction loss calculation at the nominal operating point — expect it to rise with junction temperature per the normalized curve in the datasheet. Gate charge totals 48 nC at 10 V, so at a 100 kHz switching frequency the gate drive must source roughly 4.8 mA average current; a standard MOSFET driver with a 1 A peak output handles this comfortably.
Input capacitance and switching speed
Input capacitance (Ciss) is 1370 pF typical at 25 V drain-source. That's a moderate figure — it keeps the gate drive energy per cycle manageable while still allowing reasonable switching speeds in a hard-switched topology. The 4.5 V gate threshold at 250 µA drain current sets the turn-on voltage floor; for full enhancement you drive with 10 V as specified.
The RoHS compliance status is listed as non-compliant — verify your assembly's exemption policy if you are operating under a full RoHS directive.
Where it lands in the SuperMESH family
The STFU10NK60Z is a 600 V, 10 A member of ST's SuperMESH™ line. A common cross-shop is the STF10NK60Z — the difference is the package suffix: the STFU variant uses the fully isolated TO-220FP, while the STF variant uses the standard TO-220 with a conductive tab. If your heatsink requires an isolated mounting interface, the STFU10NK60Z saves the cost of an insulating kit.