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STMicroelectronics STFU10N80K5 — Discrete Semiconductors

STFU10N80K5 MOSFET N-CH 800V 9A TO-220FP, MDmesh K5

MPNSTFU10N80K5
Active

STMicroelectronics MDmesh K5 series, STFU10N80K5, N-Channel MOSFET, 800 V Vdss, 9 A Id, 600 mOhm Rds(on) @ 4.5 A, 10 V, 22 nC Qg, TO-220-3 Full Pack (TO-220FP), -55 to 150 °C.

$3.0300Ref. price · indicative, final on quote
STMicroelectronics STFU10N80K5 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STFU10N80K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs600mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds635 pF @ 100 V

Product details

800 V N-channel in a TO-220FP — what it delivers

The STFU10N80K5: The 600 mOhm maximum on-resistance at 4.5 A, 10 V gate drive sets the conduction loss floor.

Switching losses and drive budget

Total gate charge is 22 nC at 10 V. Input capacitance Ciss is 635 pF at 100 V drain bias. The ±30 V maximum gate rating gives headroom for gate-drive overshoot, but the recommended drive voltage for rated Rds(on) is 10 V.

Maximum power dissipation is 30 W at case temperature Tc.

It is ROHS3 compliant. The base product number is STFU10; the K5 suffix identifies the MDmesh K5 generation.

Frequently asked questions

Is STFU10N80K5 RoHS compliant?

Yes, it is ROHS3 compliant, meeting the EU RoHS directive's substance restrictions.