The device is built on a standard planar MOSFET technology and is specified for a maximum junction temperature of 150 °C. Typical applications include offline switch-mode power supplies, PFC stages, and general-purpose high-voltage switching circuits where a 600 V class device is required.
The maximum on-resistance is 1.2 Ohm, specified at 2.9 A drain current and 10 V gate drive. That 10 V drive is the recommended gate voltage for achieving the lowest Rds(on); the threshold voltage is 4.5 V max at 50 µA, so a 5 V logic-level gate signal will not fully enhance the channel. Plan for a 10 V gate supply or a bootstrap driver in a half-bridge topology. These numbers are moderate for a 620 V device — a standard gate-driver IC with 1 A to 2 A peak current will switch it cleanly at tens of kilohertz without excessive drive loss.
Package and thermal — the TO-262 full-pack advantage
The I2PAKFP (TO-281) is an isolated full-pack variant of the TO-262. The plastic body covers the backside of the die, so the mounting tab is electrically isolated — no mica washer or sil-pad required. Maximum power dissipation is 30 W at case temperature, limited by the junction-to-case thermal path. For continuous loads near 7 A, a heatsink is mandatory; the full-pack construction makes mounting straightforward.
It is not subject to a last-time-buy or end-of-life notice.