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STMicroelectronics STFILED524 — Discrete Semiconductors

STFILED524 N-Channel MOSFET, 525 V, 4 A, 2.6 Ohm Rds(on)

MPNSTFILED524
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STMicroelectronics STFILED524 N-Channel MOSFET, 525 Vdss, 4 A continuous drain, 2.6 Ohm Rds(on) at 10 V, TO-262-3 Full Pack I²Pak, -55°C to 150°C junction temperature.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STFILED524 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage525 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2.6Ohm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 100 V

Product details

The STMicroelectronics STFILED524 is an N-Channel power MOSFET built with standard metal-oxide semiconductor technology.

The 525 V drain-source rating puts this MOSFET squarely into high-voltage offline applications — think flyback converters, PFC stages, or auxiliary supplies in industrial power systems. The 4 A continuous current at 25°C is the headline number, but real-world current depends on your switching frequency and heatsinking; the 20 W maximum power dissipation (Tc) is the hard ceiling. The 2.6 Ohm Rds(on) at 10 V gate drive is moderate — expect conduction losses around 2.6 W at 1 A, so plan for a heatsink or forced air if you run near the current limit. The through-hole I2PAKFP package is a field-service-friendly choice — no hot-air station needed, just a soldering iron and a screwdriver for the heatsink mount.

Frequently asked questions

What is the Rds(on) of STFILED524?

The maximum on-resistance is 2.6 Ohm at a gate-source voltage of 10 V and a drain current of 2.2 A.