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STMicroelectronics STFI7N80K5 — Discrete Semiconductors

STFI7N80K5 N-Channel MOSFET, 800V 6A, Obsolete

MPNSTFI7N80K5
Obsolete

STMicroelectronics SuperMESH5™ N-Channel MOSFET, 800V Vdss, 6A Id, 1.2Ohm Rds(on), 13.4nC Qg, TO-262-3 Full Pack (I2PAKFP), -55°C to 150°C.

$2.8600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI7N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.2Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds360 pF @ 100 V

Product details

The STFI7N80K5 is listed as obsolete. No official successor is recorded in the lifecycle data.

Key specs for fit evaluation

This is an 800 V drain-source, 6 A continuous-drain N-channel MOSFET from the SuperMESH5™ series. The gate charge is 13.4 nC at 10 V, and input capacitance is 360 pF at 100 V drain-source — both low figures for an 800 V device, which keeps switching losses manageable and simplifies the gate-drive design.

Sourcing this part now

We source it through our independent supply network — each unit is date-code verified and inspected before shipment. If you are qualifying a replacement, note that the 800 V, 6 A, 1.2 Ohm Rds(on) profile in a TO-262 full-pack is a narrow parametric window; a direct drop-in substitute is not guaranteed without verifying the pinout and thermal footprint.

Frequently asked questions

What is the replacement for STFI7N80K5?

No official replacement part number is recorded in the lifecycle data for the STFI7N80K5. Any substitute must be evaluated for pin-compatibility, package (TO-262 full pack), and parametric match — specifically 800 V Vdss, 6 A Id, and 1.2 Ohm Rds(on) at 10 V gate drive.