STMicroelectronics SuperMESH5™ series, STFI6N80K5, N-Channel MOSFET, 800 V drain-to-source voltage, 4.5 A continuous drain current, 1.6 Ohm Rds(on) at 2 A, 10 V, through-hole I2PAKFP (TO-281) package.
| Parameter | Value |
|---|---|
| Series | SuperMESH5™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.5A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | 30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Full Pack, I²Pak |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.6Ohm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 270 pF @ 100 V |
For existing BOM lines, procurement must rely on independent distribution channels for last-time-buy or surplus inventory.
The through-hole I2PAKFP (TO-281) package provides a large copper tab for heat sinking, and the full-pack isolation simplifies mounting without an insulating pad.
Determines if the part is still in production; critical for sourcing and avoiding last-time buy.
Essential for design updates, repairs, or BOM continuity when the original is obsolete.
Directs to authorized distributors for stock verification and purchasing.
Provides complete specifications, pinout, and thermal data for design validation.
Enables finding functionally equivalent alternatives from other manufacturers.
Key for BOM cost estimation and budget planning in procurement.