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STMicroelectronics STFI6N65K3 — Discrete Semiconductors

STFI6N65K3 N-Channel MOSFET, 650 V, 5.4 A, SuperMESH3

MPNSTFI6N65K3
Obsolete

STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 650 V drain-source, 5.4 A continuous drain, 1.3 Ohm Rds(on) at 10 V, ±30 Vgs max, 33 nC gate charge, 880 pF input capacitance, 30 W dissipation, TO-262-3 full-pack (I2PAK), through-hole.

$6.7100Ref. price · indicative, final on quote
STMicroelectronics STFI6N65K3 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI6N65K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.4A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.3Ohm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 50 V

Product details

650 V SuperMESH3™ N-channel — obsolete, but available on the spot desk

The STMicroelectronics STFI6N65K3 is a 650 V, 5.4 A N-channel power MOSFET built on the SuperMESH3™ technology platform. It's a through-hole device in the TO-262 full-pack package, where the full-pack construction means the tab is electrically isolated — no mica washer needed, which saves assembly time in off-line power supplies and auxiliary converters. Rds(on) is specified at 1.3 Ohm maximum with 2.7 A drain current and 10 V gate drive.

For a new design, ST's current SuperMESH3 and MDmesh families include many 650 V N-channel MOSFETs in TO-220, DPAK, and D2PAK packages that would be a better fit. If you need a drop-in replacement for an existing BOM line, the base product number STFI6N suggests the I2PAK full-pack footprint — confirm the pinout and package dimensions against the candidate replacement before committing the board.

Full-pack I2PAK — no isolation hardware needed

The TO-262 full-pack (I2PAK) package is a through-hole, isolated-tab design. This saves a BOM line and a manual assembly step. The trade-off is slightly higher thermal resistance compared to a standard TO-220 with a pad, so check the junction temperature at your operating point against the 150 °C TJ maximum.

Frequently asked questions

Where can I buy STFI6N65K3?

STFI6N65K3 is obsolete from STMicroelectronics. We source it through independent distribution — submit an RFQ and we will locate available inventory, verify authenticity, and provide current pricing and lead time at quote time. No stock figures or prices are published here.

What is the replacement for STFI6N65K3?

For a new design, consider current-generation 650 V N-channel MOSFETs from ST's MDmesh or updated SuperMESH3 families, but verify the package footprint (I2PAK full-pack, TO-262) and pinout against any candidate before substituting on an existing board.