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STMicroelectronics STFI5N95K3 — Discrete Semiconductors

STFI5N95K3 N-Channel MOSFET, 950 V, 4 A, SuperMESH3, TO-262

MPNSTFI5N95K3
Obsolete

STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 950 V drain-source, 4 A continuous drain at 25°C, 3.5 Ohm on-resistance at 10 V drive, through-hole TO-262 full-pack I²Pak, -55°C to 150°C junction temperature.

$2.4100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI5N95K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 25 V

Product details

950 V N-channel MOSFET in a full-pack I²Pak

The STFI5N95K3: It is designed for high-voltage switching applications such as offline power supplies, flyback converters, and lighting ballasts where the 950 V drain-source rating provides ample headroom for universal mains input with surge margin. The through-hole TO-262 full-pack (I²Pak) package isolates the tab, simplifying heatsinking and eliminating the need for an insulating pad in many chassis-mount layouts.

STMicroelectronics lists the STFI5N95K3 as obsolete.

TO-262 full-pack (I²Pak) package, supplier device I2PAKFP, no exposed metal tab, bolted directly to a grounded heatsink without an insulator.

Frequently asked questions

What is the STFI5N95K3 used for?

It is a 950 V, 4 A N-channel MOSFET for high-voltage switching in offline power supplies, flyback converters, lighting ballasts, and industrial power stages where the through-hole full-pack package simplifies heatsinking.