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STMicroelectronics STFI4N62K3 — Discrete Semiconductors

STFI4N62K3 N-Channel MOSFET, 620 V, 3.8 A, SuperMESH3

MPNSTFI4N62K3
Obsolete

STMicroelectronics SuperMESH3™ N-Channel MOSFET, STFI4N62K3, 620 V Vdss, 3.8 A Id, 2 Ohm Rds(on) at 10 V, TO-262-3 Full Pack I²Pak, Through Hole, 25 W power dissipation, 150°C junction temperature.

$1.2700Ref. price · indicative, final on quote
STMicroelectronics STFI4N62K3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI4N62K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.8A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2Ohm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds550 pF @ 50 V

Product details

STMicroelectronics lists the STFI4N62K3 as Obsolete. For sustaining production or repair, the available channel is independent distribution — franchised or verified excess stock.

Package and mounting — TO-262 full-pack I²Pak

The STFI4N62K3 comes in a TO-262-3 Full Pack (I²Pak) through-hole package, with the supplier device package designated I2PAKFP (TO-281). The full-pack isolation means the metal tab is electrically isolated from the drain, which simplifies heatsinking without an insulating pad in many designs. The through-hole mount suits wave-solder assembly and manual rework.

Frequently asked questions

What is the replacement for STFI4N62K3?

ST does not list a direct replacement part for the STFI4N62K3. For new designs, look at current-production 620 V SuperMESH3 N-channel MOSFETs from ST with similar Rds(on) and gate charge in a TO-220 or TO-247 package. Cross-reference by Vdss, Rds(on), and gate charge to find a suitable alternative.