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STMicroelectronics STFI40N60M2 — Discrete Semiconductors

STFI40N60M2 N-Channel MOSFET, 600V, 34A, MDmesh II Plus

MPNSTFI40N60M2
Obsolete

STMicroelectronics MDmesh™ II Plus series, N-Channel MOSFET, Through Hole, TO-262-3 Full Pack, I²Pak, 600 V drain-source, 34 A continuous drain at 25°C, 88 mOhm Rds(on) at 17 A, 10 V gate drive, 57 nC gate charge, -55°C to 150°C junction temperature.

$7.7700Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI40N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs88mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 100 V

Product details

Obsolete — plan the last-time-buy or source surplus

No new production runs are planned; the part is available only through surplus, broker, or last-time-buy inventory. For existing BOM lines, secure enough stock to cover the remaining production run before channel inventory dries up.

The 600 V drain-source voltage (Vdss) places this MOSFET in the high-voltage class for off-line power supplies, PFC boost stages, and flyback converters. The 88 mOhm maximum Rds(on) at 17 A with 10 V gate drive defines the conduction loss; note the 10 V drive requirement — this part is not suited for 5 V logic-level gate drive without a driver stage. Gate charge of 57 nC at 10 V is moderate for a 600 V device, keeping switching losses manageable with standard gate-driver ICs.

Full-pack TO-262 — no insulating hardware needed

The TO-262-3 Full Pack (I2PAKFP, supplier device package I2PAKFP TO-281) has an isolated metal tab, so no insulating pad or shoulder washer is required between the device and the heatsink. This simplifies assembly and improves thermal contact. Through-hole mounting suits high-vibration environments or manual rework lines where surface-mount parts are less practical.

The 150°C maximum junction allows higher power dissipation in hot environments, but the 40 W package limit still governs.

Frequently asked questions

What is the replacement for STFI40N60M2?

The evidence does not list an official STMicroelectronics successor order code. A suitable replacement would be a current 600 V, 34 A N-channel MOSFET in a TO-262 full-pack (I2PAKFP) package with similar Rds(on) and gate charge. Check ST's MDmesh series for a pin-compatible upgrade; verify the gate drive voltage (10 V) and thermal pad compatibility before substituting.