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STMicroelectronics STFI34NM60N — Discrete Semiconductors

STFI34NM60N N-Channel MOSFET, 600V, 105mOhm, 29A, MDmesh II

MPNSTFI34NM60N
Obsolete

STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 600 V Drain-to-Source Voltage, 105 mOhm Rds(on) @ 14.5 A, 10 V, 29 A Continuous Drain Current, Through Hole, TO-262-3 Full Pack I²Pak, I2PAKFP (TO-281).

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI34NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C29A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs105mOhm @ 14.5A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2722 pF @ 100 V

Product details

600 V, 105 mOhm, 29 A — the power MOSFET that defined a generation

The STFI34NM60N: These ratings place it in the high-voltage switching class used in power supplies, lighting ballasts, and industrial converters where the through-hole I2PAKFP package (TO-281) provides a low-thermal-resistance path to a heatsink.

The 600 V, 105 mOhm, 29 A ratings and the I2PAKFP footprint are the key parameters to match when selecting a substitute.

Gate charge and input capacitance — switching loss drivers

The STFI34NM60N specifies a maximum gate charge of 84 nC at 10 V and an input capacitance of 2722 pF at 100 V drain-source. These numbers drive the gate-drive power requirement and the switching transition times. A gate-drive source capable of sourcing and sinking 84 nC per cycle at the target frequency is needed; the 2722 pF Ciss also sets the Miller plateau duration. For a hard-switched converter at 100 kHz, the switching losses will be moderate — budget the gate-drive losses accordingly.

Frequently asked questions

What is a direct replacement for STFI34NM60N?

A replacement should match the 600 V Vdss, 105 mOhm Rds(on) max, 29 A Id rating, and the I2PAKFP (TO-281) through-hole package. A current-generation MDmesh MOSFET from ST with similar ratings is the starting point for qualification.