650 V, 22 A, 148 mOhm — the MDmesh V power switch
The STFI31N65M5: The 45 nC typical gate charge keeps switching losses manageable in hard-switched topologies. This through-hole device comes in the TO-262-3 Full Pack, I²Pak package.
The 650 V Vdss gives headroom for 400 V DC-link rails in PFC stages, flyback converters, and resonant converters with up to 10% overshoot margin. The 148 mOhm Rds(on) at 10 V gate drive means conduction loss at 11 A is about 18 W — the 30 W package dissipation limit (Tc) leaves some margin but demands a good thermal path to the heatsink. The full-pack I2PAKFP isolates the drain tab electrically, so you can mount it directly to a grounded heatsink without a mica washer. Gate charge of 45 nC is moderate; a standard gate driver with 1 A to 2 A peak current will switch it in the tens of nanoseconds. Input capacitance of 1865 pF at 100 V is typical for this class and sets the drive impedance needed to avoid ringing.