The STMicroelectronics STFI28N60M2 is a 600 V, 22 A N-channel power MOSFET from the MDmesh™ II Plus series, built with ST's proprietary strip-layout technology to reduce on-resistance and switching losses. It comes in a through-hole I2PAKFP (TO-262-3 Full Pack) package, rated for 150°C junction temperature and dissipating up to 30 W at the case. Typical applications include high-voltage switching converters, power factor correction stages, and lighting ballasts where the 600 V blocking voltage and 150 mOhm Rds(on) at 10 V gate drive provide a solid efficiency baseline.
Key ratings — the numbers that decide the fit
The 600 V drain-to-source voltage (Vdss) sets the off-state blocking capability; in a 400 V DC bus or PFC stage this leaves healthy derating margin. Gate charge of 36 nC at 10 V and input capacitance of 1440 pF at 100 V give a sense of the switching drive requirement — manageable for a standard gate driver IC.