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STMicroelectronics STFI26NM60N — Discrete Semiconductors

STFI26NM60N N-Channel MOSFET, 600V, 20A, 165mOhm, MDmesh II

MPNSTFI26NM60N
Obsolete

STMicroelectronics MDmesh™ II N-Channel MOSFET, 600 V drain-source, 20 A continuous drain, 165 mOhm Rds(on) at 10 V, 60 nC gate charge, TO-262 full pack (I2PAKFP). Through-hole, ±25 V gate-source, 35 W dissipation.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STFI26NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation35W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Full Pack, I²Pak
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs165mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 50 V

Product details

600 V N-channel MOSFET from the MDmesh™ II line

The STFI26NM60N is a 600 V N-channel power MOSFET from ST's MDmesh™ II series, built for high-voltage switch-mode power supplies and offline converters. The gate charge of 60 nC at 10 V keeps switching losses manageable in hard-switched topologies.

Package and mounting — through-hole I2PAKFP

Housed in a TO-262 full-pack (I2PAKFP) through-hole package with the supplier device code I2PAKFP (TO-281). The full-pack construction means the back of the package is electrically isolated — no separate insulating pad needed against the heatsink, which simplifies assembly in grounded heatsink designs. Rated for a maximum power dissipation of 35 W at case temperature.

ST lists this part as Obsolete.

Frequently asked questions

What is the Rds(on) of STFI26NM60N?

The maximum on-resistance is 165 mOhm at a drain current of 10 A and a gate-source voltage of 10 V.