650 V, 15 A N-channel in a full-pack through-hole
This part targets offline switch-mode power supplies, PFC stages, and lighting ballasts where the full-pack package simplifies assembly and cuts BOM cost on isolation hardware.
That 10 V drive level is the recommended gate voltage for minimum on-resistance — the gate threshold is 4 V max at 250 µA, so a standard 12 V or 15 V gate-drive rail from a PWM controller or driver IC will fully enhance the channel.
Full-pack package — no isolation washer needed
The I2PAKFP (TO-281) full-pack moulding completely encapsulates the die attach pad, so the exposed surface is plastic, not metal. That means the device can be bolted directly to a grounded heatsink without a silicone pad or mica washer — saves assembly time and removes one thermal interface from the stack. The trade-off is higher thermal resistance compared to a standard TO-220 with an insulating kit; the 30 W power dissipation limit at case temperature reflects that. For a 15 A continuous rating, the designer should model junction temperature rise at the expected load current and switching frequency.
A buyer holding a production requirement should qualify an alternative — the closest functional match within the MDmesh family will be a 650 V, 15 A class N-channel MOSFET in a through-hole full-pack or isolated TO-220 package, but pin-compatibility and gate-drive thresholds must be verified against the specific application.