STMicroelectronics SuperMESH™ series, STFI20NK50Z, N-Channel MOSFET, 500 V Vdss, 17 A continuous drain, 270 mΩ Rds(on) at 10 V, 119 nC gate charge, TO-262-3 full pack (I2PAKFP), through-hole.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Full Pack, I²Pak |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 270mOhm @ 8.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 119 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2600 pF @ 25 V |
For a 500 V part, this gate charge is moderate; a standard MOSFET driver with a few amps of peak current handles it cleanly in the 50–100 kHz range.
STMicroelectronics lists the STFI20NK50Z as obsolete.
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On-resistance is a key parameter for power dissipation and efficiency calculations.